宽带隙立方氮化硼薄膜制备

Deposition of Cubic Boron Nitride Thin Films with Wide Energy Gap

报道了用偏压调制射频溅射方法制备宽带隙立方氮化硼 ( c- BN)薄膜的实验结果 .研究了衬底负偏压对制备c- BN薄膜的影响 .c- BN薄膜沉积在 p型 Si( 10 0 )衬底上 ,溅射靶为六角氮化硼 ( h- BN) ,工作气体为 Ar气和 N2 气混合而成 ,薄膜的成分由傅里叶变换红外谱标识 .结果表明 ,在射频功率和衬底温度一定时 ,衬底负偏压是影响 c-BN薄膜生长的重要参数 .在衬底负偏压为 - 2 0 0 V时得到了立方相含量在 90 %以上的 c- BN薄膜 .还给出了薄膜中的立方相含量随衬底负偏压的变化 ,并对 c-

Cubic boron nitride( c- BN) thin film s were deposited on p- type Si( 10 0 ) wafers( 8— 15 Ω· cm) by Radio Frequency ( RF) sputter.The Si substrates were biased by DC voltage negatively with respect to the ground.Before deposition,the sub- strates were ultrasonically cleaned using a triple solvent procedure followed by a distilled water rinse.The targetwas the hot- pressed hexagonal boron nitride of4N purity. The working gas was the mixture of Ar and N2 with pressure of( 0 .6 6— 1.33Pa) .The films were characterized by Fourier Transform Infrared Spectroscopy( FTIR) .U nder a definite substrate tem - perature and RF power,substrate negative DC bias was an important factor that affects the form ation of c- BN.At the sub- strate negative DC bias of2 0 0 V,we obtained the c- BN film s that contained more than90 % cubic phase.It is evident thatdif- ferent substrate DC bias voltages result in different cubic phase contents in the c- BN film s and the relative content of c- BN in the thin films increases with the increase of substrate negative DC bias.