发射极-基极-发射极结构PNP型AlGaAs/GaAsHBT电流增益的理论分析

Theoretical Analysis of Current Gain of PNP Al Ga As/ Ga As Heterojunction Bipolar Transistors with Emitter- Base- Emitter Structure

建立了 PNP型异质结双极晶体管基区少数载流子浓度的解析模型 .理论分析了发射极 -基极 -发射极布局的PNP型 HBT的电流增益 .讨论了不同基极电流成分 ,如外基区表面复合电流 ,基极接触处的界面复合电流 ,基区体内复合电流 。

An analytical solution to the concentration of minor carriers in the base region of a PNP- type heterojunction bipolar transistor has been developed.The theoretical current gain of PNP heterojunction bipolar transistor with emitter- base- em itter structure has been calculated based on the analytical m odel.The influence of differentbase current com ponents on the current gain is discussed,including the extrinsic base surface recombination current,the interface recombination current at base con- tact,the base bulk recombination current and the mesa recombination current.