一种考虑温度影响的SiC JFET的数据驱动模型

Data Driven Model for SiC JFET with Thermal Effects

提出了基于数据驱动建模思想建立考虑温度影响的常断型SiC JFET器件模型的方法,解决了目前物理建模方法应用于功率半导体器件建模过程中器件自身结构、材料等参数获取困难的问题。根据常断型SiC JFET器件手册的图表信息并结合部分实测数据,在Saber软件中建立其热电耦合模型。通过对其静态特性和动态特性的仿真和实验研究,验证了考虑温度影响的常断型SiC JFET数据驱动模型的准确性。该数据驱动建模方法可以推广应用于其他功率半导体器件如功率SiC MOSFETs和GaN FETs等的建模。

A data driven model with thermal effects is proposed for normally-off SiC JFET. The novel features of the model are that the modeling method saves the trouble of obtaining the physical parame- ters and takes the temperature of SiC JFET into account. These are particularly important because the devicers physical parameters on materials and dimensions are hard to obtain and temperature affects the other major parameters. The model is implemented in Saber software based on the characteristics of the datasheet and the test data. Both simulation and experiment tests are carried out for the research of stat- ic characteristics and switching characteristics, which verify the accuracy of the model. Besides, the method of data driven modeling can also be applied to other modern power devices, e.g. SiC MOS- FETs, GaN FETs, etc.