摘要
InAs/GaSbⅡ类超晶格以其特有的量子效率高、暗电流小、能带结构可调等材料性能和器件优势,成为第三代红外探测器技术的最佳选择之一。本文报道了中波InAs/GaSbⅡ类超晶格材料的设计、生长、器件工艺技术,制备出了高性能的128×128中波InAs/GaSbⅡ类超晶格红外焦平面探测器,像元暗电流密度降到1.8×10-7A/cm2,量子效率达36.64%。
Owing to the excellent material performance and device advantage of InAs/GaSb Type-II superlattice such as high quantum efficiency, low dark current and adjustable energy, band structure, it has been one of the best choice for the third-generation infrared focal plane arrays detector. Material design, material growth and device technology, of MW InAs/GaSb Type-II superlattice are reported. High performance 128 × 128 MW focal plane arrays were fabrica- ted. Dark current density is 1.8 × 10^- 7 A/cm2 and quantum efficiency reaches 36.64%.
出处
《激光与红外》
CAS
CSCD
北大核心
2014年第3期258-260,共3页
Laser & Infrared
