双重势垒一维光子晶体量子阱内部局域电场分布

Localized Electric Field of One-dimensional Photonic Crystal Quantum Well of Double Barrier

利用传输矩阵法理论,研究了双重势垒一维光子晶体量子阱(AB)k(CD)m(DCD)n(DC)m(BA)k的内部局域电场.结果表明:双重势垒光量子阱内部分布着很强的局域电场,且越靠近阱中心,局域电场越强;双重势垒光量子阱垒层特别是内垒层和外垒层厚度同时增大时,内部局域电场快速增强,而且阱中心增强最明显;双重势垒光量子阱阱层宽度增大时,越靠近阱中心,局域电场越强,但阱宽按偶数倍增大时阱中心的局域电场不变并保持恒定极大值,而阱宽按奇数倍增大到一定数值后,光量子阱内部局域电场则趋于阱宽按偶数倍增大时的局域电场恒定极大值.该研究可为分析光量子势阱的量子化效应机理和分立透射谱的形成内因,以及量子光学产品的实际设计等提供指导.

The transmission matrix method theory was applied to study the localized electric field inside the one-dimensional photonic crystal quantum well of double barrier （AB）k （CD）,,, （DCD）, （DC）o, （BA）k. The result shows that a strong electric field, which will become stronger as approaching the well center, is distributed inside the photonic crystal quantum well of double barrier. When barrier layers of the well thicken, especially the inner and outer barrier layers thicken simultaneously, the localized electric field rapidly strengthens, and the react is most obviously in the center of the well. When the well layers widen, the closer to the well center, the stronger the electric field is. But when the well layers widen by even multiple, the localized electric field in the well center remain steadily in maximum value. While when the well layers widen by odd multiple, the intensity of the inner localized electric field tend to be the maximum produced by even multiple widening. The distribution characteristic above provides instructions for quantization effect mechanism and the intrinsic formation factors of discrete transmission spectra of photonic crystal quantum potential well, and for applied designing of quantum optics devices.