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小型化R波段限幅低噪声放大器设计

Design of a Miniature R-Band Limiting Low Noise Amplifier
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摘要 设计了一种小型化限幅低噪声放大器。采用Lange桥平衡结构,在实现低噪声的同时,得到较小的输入输出电压驻波比。采用集总参数和分布参数元件,实现了各级匹配。该小型化限幅低噪声放大器工作在R波段(2.1~2.5GHz),噪声系数低于1dB,输入输出驻波系数小于1.4,增益大于31dB,带内增益波动只有±0.2dB。通过SP2D开关实现两路输出,输出隔离度大于42dB。 A miniature amplitude limited LNA was designed, in which Imnge coupler was used to obtain smaller VSWR, and lumped and distributed components were employed to make a perfect match to the circuit. Operating in the frequency range from 2.1 GHz to 2.5 GHz, the LNA achieved a noise figure less than 1 dB, a VSWR below 1. 4, and a gain up to 31 dB with in-band fluctuation less than ±0. 2 dB. The circuit realized two RF outputs with an isolation over 42 dB by using a high performance SP2D switch.
作者 席汉兵 刘宇
出处 《微电子学》 CAS CSCD 北大核心 2014年第1期19-22,共4页 Microelectronics
关键词 低噪声放大器 限幅放大器 低增益波动 LNA Limiting amplifier Low gain fluctuation
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  • 1A Ward.S-Band GaAsFET Amplifiers.RF Design, 1989.2
  • 2G D Vendelin.Feedback Effects on the Noise Performance of GaAs MESFETs, Low Noise Microwave Transistors and Amplifiers.IEEE Press, 1981
  • 3G Gonzaleaz.Microwave Transistor Amplifiers.Prentice-Hall, 1984
  • 4L Besser.Stability Considerations of Low Noise Transistor Amplifiers With Simultaneous Noise Microwave Transistors and Amplifiers.IEEE Press, 1981

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