集成电路单粒子瞬态效应与测试方法

Single Event Transients in Integrated Circuits and Test Methods

随着器件尺寸的等比例缩小,单粒子瞬态效应对集成电路的影响愈发明显,其产生机理及作用更加复杂。从集成电路单粒子瞬态脉冲的产生机理及模型出发,讨论分析了模拟和数字集成电路的单粒子瞬态效应,介绍了单粒子瞬态脉冲宽度的测试方法与测试结构。

With dimensional scaling of semiconductor devices, single event transient is becoming one of the most important threats to integrated circuits used in space environments. Single event transients in analog and digital integrated circuits were analyzed based on generation mechanism of single event transient pulse in IC s and its physical models. Methods for testing pulse w.idth of single event transient in integrated circuits and its test structures were discussed.