摘要
随着器件尺寸的等比例缩小,单粒子瞬态效应对集成电路的影响愈发明显,其产生机理及作用更加复杂。从集成电路单粒子瞬态脉冲的产生机理及模型出发,讨论分析了模拟和数字集成电路的单粒子瞬态效应,介绍了单粒子瞬态脉冲宽度的测试方法与测试结构。
With dimensional scaling of semiconductor devices, single event transient is becoming one of the most important threats to integrated circuits used in space environments. Single event transients in analog and digital integrated circuits were analyzed based on generation mechanism of single event transient pulse in IC s and its physical models. Methods for testing pulse w.idth of single event transient in integrated circuits and its test structures were discussed.
出处
《微电子学》
CAS
CSCD
北大核心
2014年第1期135-140,共6页
Microelectronics
基金
国家自然科学基金资助项目(61204112)
中国博士后科学基金资助项目(2012M521628)
关键词
单粒子效应
单粒子瞬态效应
自测试结构
Single-event effect
Single-event transient
Self-test structure