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Effects of Thickness and Polarization Field on the Photovoltaic Properties of BiFeO3 Thin Films

Effects of Thickness and Polarization Field on the Photovoltaic Properties of BiFeO3 Thin Films
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摘要 We study the effects of film thickness on lattice parameters, direct band gap and photovoltaic outputs in the sol-gel derived BiFeO3 thin films. With the change of the film thickness, the great transitions will take place in the preferred orientation and lattice parameters. Furthermore, the photovoltaic outputs are significantly dependent on the film thickness. The results show that the open circuit voltage gradually increases and the short circuit current reciprocally decreases with the increase of film thickness. In particular, we demonstrate for the first time that there are tunable photovoltaic outputs with external electric field polarization switching in the polycrystalline BiFeO3 film, which is critical for the future device applications based on the photovoltaic properties of BiFeO3 films. We study the effects of film thickness on lattice parameters, direct band gap and photovoltaic outputs in the sol-gel derived BiFeO3 thin films. With the change of the film thickness, the great transitions will take place in the preferred orientation and lattice parameters. Furthermore, the photovoltaic outputs are significantly dependent on the film thickness. The results show that the open circuit voltage gradually increases and the short circuit current reciprocally decreases with the increase of film thickness. In particular, we demonstrate for the first time that there are tunable photovoltaic outputs with external electric field polarization switching in the polycrystalline BiFeO3 film, which is critical for the future device applications based on the photovoltaic properties of BiFeO3 films.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2014年第3期144-147,共4页 中国物理快报(英文版)
基金 Supported by the National Natural Science Foundation of China under Grant Nos 11174092 and 11374181, the Doctoral Program of the Ministry of National Education under Grant No 20100142110068, and the Fundamental Research Funds for the Central Universities under Grant No HUST 0118012006.
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