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Tuning Out-of-Plane Spin Polarization Using in-Plane Magnetic Fields in a Quasi-One-Dimensional Quantum Wire Embedded in (110) Plane

Tuning Out-of-Plane Spin Polarization Using in-Plane Magnetic Fields in a Quasi-One-Dimensional Quantum Wire Embedded in (110) Plane
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摘要 We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions (SOIs) on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the (110) crystallographic plane. We find that the oscillations of the conductance induced by the SOIs become more significant and different for the spin-up and spin-down electrons in the presence of the in-plane magnetic field. The conductance exhibits a significant anisotropic behavior and electrons exhibit out-of-plane spin polarization which can be tuned by an in-plane magnetic field. These features offer us an efficient way to control SOI-induced spin transport using in-plane magnetic fields. We investigate theoretically the combination effect of an in-plane magnetic field and spin-orbit interactions (SOIs) on the spin and charge transport property of a quasi-one-dimensional quantum wire embedded in the (110) crystallographic plane. We find that the oscillations of the conductance induced by the SOIs become more significant and different for the spin-up and spin-down electrons in the presence of the in-plane magnetic field. The conductance exhibits a significant anisotropic behavior and electrons exhibit out-of-plane spin polarization which can be tuned by an in-plane magnetic field. These features offer us an efficient way to control SOI-induced spin transport using in-plane magnetic fields.
出处 《Chinese Physics Letters》 SCIE CAS CSCD 2014年第3期148-151,共4页 中国物理快报(英文版)
基金 Supported by the National Basic Research Program of China under Grant Nos 2011CB922204 and 2012CB934304, the National Natural Science Foundation of China under Grant Nos 11374002 and 10934007, and the Hunan Provincial Natural Science Foundation of China under Grant No 13JJ2026.
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