Stable Blue Luminescence of Porous Silicon
Stable Blue Luminescence of Porous Silicon
出处
《材料科学与工程(中英文A版)》
2013年第9期609-614,共6页
Journal of Materials Science and Engineering A
参考文献23
-
1A. Uhlir, Electrolytic shaping of germanium and silicon, Bell Syst. Tech. J. 35 (1956) 333.
-
2K. Uchida, K. Tomioka, S. Adachia, Ultraviolet emission from porous silicon photosynthesized in aqueous alkali fluoride solutions, Journal of Applied Physics 100 (2006) 1.
-
3C. Delure, G. Allan, M. Lannoo, Theoretical aspects of the luminescence of porous silicon, Physical Review B 48 (1993) 11024.
-
4The photoluminescence of porous silicon, www.nottingham.ac. uk! ggiemr/downloads/hfa _appendix %20A %20- %20Photoluminescence.pdf.
-
5T.V. Torchynska, A.V. Hernandez, G. Polupan, SJ. Sandoval, M.E. Cueto R.P. Sierra, et al., Photoluminescence and photocurrent in porous silicon Schottky barriers, Thin Solid Films 492 (2005) 327.
-
6Y.M. Weng, Z.N. Fan, X.F. Zong, Effective visible emission from porous silicon, Chinese Phys. Lett, 10 (1993) 18.
-
7M.A. Vasquez, G.A. Rodriguez, G.G. Salgado, G.R. Paredes, R.P. Sierra, FTIR and photoluminescence studies of porous silicon layer oxidized in controlled water vapor condition, Revista Mexicana de Fisica 53 (2007) 431.
-
8K.H. Li, C. Tsai, S. Shih, T. Hsu, D.L. Kwong, J.e. Campbell, The photoluminescence spectra of porous silicon boiled in water, Journal of Applied Physics 72 (1992) 3816.
-
9H. Mizuno, H. Koyama, N. Koshida, Controlled electroluminescence spectra of porous silicon diodes with a vertical optical cavity, Appl. Phys. Lett. 69 (1996) 2965.
-
10J.P. Proot, C. Delerue, G. Allan, Electronic structure and optical properties of silicon crystallites: Application to porous silicon, Appl. Phys. Lett. 61 (1992) 1948.
-
1严辉,马黎君,陈光华,黄世平,文华杰,郭伟明.金属Sn薄膜的高温氧化与表面特征[J].物理学报,1997,46(8):1658-1664. 被引量:7
-
2杨欣.放大器故障分析[J].中国有线电视,2005(24):2454-2455.
-
3龙永福,葛进,丁训民,侯晓远.Temperature:a critical parameter affecting the optical properties of porous silicon[J].Journal of Semiconductors,2009,30(6):29-33.
-
4麦振洪.多孔硅——一种能发光的单晶硅[J].现代物理知识,1992,4(4):16-17.
-
5刘宝林.GaN的极性特征、测量及应用[J].半导体光电,2002,23(2):118-121.
-
6王彩凤,李清山,胡波,李卫兵.The effect of annealing on structural,optical and electrical properties of ZnS/porous silicon composites[J].Chinese Physics B,2009,18(6):2610-2614. 被引量:3
-
7柴旭朝,周东,刘斌,谢自力,韩平,修向前,陈鹏,陆海,张荣,郑有炓.Effect of High-Temperature Annealing on Yellow and Blue Luminescence of Undoped GaN[J].Chinese Physics Letters,2015,32(9):145-148.
-
8冉洋,邹小斌,朱有坤,苟苏文.激光毛化表面工艺性能的分析[J].激光杂志,2015,36(9):103-106.
-
9阎军.原子水平的表面特征传感器—扫描式隧道电子显微镜(STM)[J].计测,1990,16(1):32-32.
-
10汤安东.玻璃基板的表面特征对STN-LCD显示特性的影响[J].光学精密工程,2001,9(3):273-278.