摘要
本实验采用质谱计比较法,并通过前置检漏提高检漏灵敏度的手段,在专门设计的实验装置土,对用于北京正负电子对撞机同步辐射X-射线光刻光束线上超薄铍膜(d=18μm)进行了漏率测量。计算表明漏率为10^(-5)Pa·m^3/s量级,与国外进口铍膜试验报告上所给出的漏率数据一致。
This experiment employed mass-spectro-meter comparison method to measure the leak coefficient of ultra-thin beryllium film(d=18μm) of X-ray lithography beam line of Bejing Electron-Positron Colliding Device at a specially designed equipment. To enhance the sensitivity of leak detecting, preset leak detecting method was also introduced. The calculation results show that the leak efficiency is about 10^(-5)Pa· m^3/s. It is consistent with the leak efficiency data of the imported Berylliurn film given by the test sheet.
出处
《光学机械》
CSCD
1991年第3期44-47,共4页
