一维SiC纳米材料制备技术研究进展

Progress in Preparation of One-Dimensional SiC Nanomaterials

一维SiC纳米材料由于具有独特的电学、光学及力学性能,在新型纳米光电子器件、生物医学传感器、储能和材料增韧等领域拥有广阔的应用前景。介绍了基于气相-液相-固相(VLS)、固相-液相-固相(SLS)、气相-固相(VS)和氧化物辅助生长的生长机制(OAG)制备一维SiC纳米材料的方法,并分析了各种方法的特点。一维SiC纳米材料的制备方法主要存在以下几个问题:(1)工艺过程中温度高(模板法、激光烧蚀法、电弧放电法、热蒸发法、碳热还原法)或压力大(溶剂热法),涉及过程复杂;(2)产物中常含有金属杂质(如金属气-液-固(VLS)催化生长法)或表面包覆SiO2层(激光烧蚀法、电弧放电法、碳热还原法),形貌不均一;(3)产量低(模板法、溶剂热法)。这些问题制约了高纯一维SiC纳米材料的制备及其本征性能的研究,也不利于实现一维SiC纳米材料的规模化生产。因此,发展新型低成本高纯一维SiC纳米材料的制备技术对于推动一维SiC纳米材料的研究、规模化生产以及在相关高科技领域中的应用具有十分重要的意义。

One-dimensional silicon carbide nano-materials had potential applications in novel nano-scale photonic and electronic de- vices, biomedical sensors, energy storage and toughening due to their unique electrical, optical and mechanical properties. In this pa- per, several methods of preparing one-dimensional silicon carbide nano-materials based on vapour-liquid-solid （ VLS）, solid-liquid-sol- id （SLS）, vapour-solid （VS） and oxide-assisted-growth （OAG） growth mechanism were introduced. The characteristics for prepara- tion methods of one-dimensional SiC nano-materials were analyzed. These methods had disadvantages as follows ： （ 1 ） high temperature （template method, laser ablation synthesis, arc-discharge approach, heating and evaporation, and carbonthermal reduction） or high pressure （solvothermal method） with complicated process; （2） the products were contaminated by the metallic catalyst-assistant（ met- al-catalytic vapour-liquid-solid growth method） or covered with amorphous SiO2 （laser ablation synthesis, arc-discharge approach and carbonthermal reduction）, and had various morphologies（ carbonthermal reduction） ; （3） low yield （template method and solvothermal method）. These shortcomings not only restricted the research on intrinsic properties of high-purity one-dimensional silicon carbide nano-materials but also went against the scale-up production of one-dimensional silicon carbide nano-materials. The development of new preparation method for high-purity one-dimensional silicon carbide nano-materials with low cost was very important in research, scale- up production and application in high-tech field of one-dimensional silicon carbide nano-materials.