PECVD制备掺氮类金刚石薄膜的电化学特性

Electrochemical Properties of Nitrogen-doped DLC Films Deposited by PECVD Technique

利用混合离子束系统,通过辉光放电等离子体增强化学气相沉积(PECVD)方法制备出类金刚石薄膜(DLC)和掺氮类金刚石薄膜(N-DLC),用可见拉曼光谱、X射线光电子能谱和扫描探针显微镜表征薄膜微观结构和表面形貌,采用电化学工作站测量了薄膜的电化学性能。结果表明,DLC薄膜的表面光滑致密、粗糙度低,掺氮增加了薄膜中的sp2团簇相并形成了C-N键,并使C-O键含量和薄膜表面的活性位点增加。N-DLC薄膜电极在硫酸溶液中的电化学势窗达4.5 V和较低的背景电流(0.3±0.2μA/cm2);在铁氰化钾溶液中电极的电流响应明显,表现为受扩散控制的准可逆过程。电极具有很好的重复性和稳定性。

Diamond-like carbon （DLC） and Nitrogen-doped diamond-like carbon （N-DLC） films were syn- thesized by glow discharge plasma enhanced chemical vapor deposition （PECVD） using a hybrid ion beam system. The microstructure and surface topography of films were characterized by Raman spec- troscopy, X-ray photoemission spectroscopy and scanning probe microscopy. The electrochemical perfor- mance of the films was examined by an electrochemical workstation. Results indicate that the surface of all the deposited films is very smooth with low roughness. Nitrogen doping enhances the clustering of sp2 sites and results in the formation of C-N bond, meanwhile, increases the amount of C-O bond and the sur- face active sites of films. N-DLC film electrode shows a wide potential window range over 4.5 V, lower background current （0.3±0.2/INcm2） in H2SO, solution. N-DLC film electrode with good repeatability and stability displays significantly current response and nearly reversible electrode reaction in K3Fe （CN）6solution. Furthermore, the electrode reaction is controlled by diffusion process.