摘要
在真空条件下,通过氧化铪和碳化硼反应制备出高纯硼化铪粉体并采用X射线衍射及扫描电子显微镜对其物相组成和形貌进行表征。结果表明:在真空条件下,氧化铪和碳化硼在1300℃的温度下即可发生反应,与由吉布斯自由能和范特霍夫等温公式所得结果相吻合。硼化铪晶粒尺寸随着烧结温度和保温时间的增加而增大,保温时间对其影响更明显。过量的碳化硼对硼化铪的结晶性有帮助,并且硼化铪的结晶度随着碳化硼的增加得到提高。
High pure hafnium diboride (HfB2 ) powders have been successfully prepared by the reaction of hafnium dioxide (HfO2 ) and boron carbide (B4C) in vacuum. The structure and morphology were characterized by X-ray diffraction (XRD) and scanning electron microscope (SEM). It shows that FIfO2 and B4C can react with each other at 1300 ℃, and this is in agreement with the result deduced from Gibbs free energy changes (AGRT) and Van Hough isothermal formula. The grain sizes of the synthesized nfn2 increase with heat-treatment temperature and holding time, and the holding time have a greater influence on particle size. The crystallization of HfB2 powder were promoted by the excess of B4 C and the crystallization level of HfB2 improved with B4C content increase.
出处
《硅酸盐通报》
CAS
CSCD
北大核心
2014年第2期436-439,共4页
Bulletin of the Chinese Ceramic Society
关键词
高纯硼化铪
范特霍夫等温公式
结晶性
high pure hafnium diboride
Van Hough isothermal formula
crystallization