期刊文献+

复合母排中点电流的研究

Study on Midpoint Current of Compound Busbar
下载PDF
导出
摘要 本文以NPC三电平逆变器为例,研究了复合母排端口参数矩阵的提取方法及复合母排多端口电路模型的建模方法,并且利用母排多端口模型搭建了NPC三电平逆变器的仿真系统。根据中点电流的形成原理以及震荡的机理,分析了逆变器元件的杂散参数对中点电流的影响。测结果验证了仿真计算的可靠性与有效性,该分析和仿真计算方法可用于指导复合母排的参数计算与优化设计。 Taking NPC 3-level inverter as an example, this paper studies the method of extracting composite compound bus bar port parameter matrix and building composite compound busbar multi-port circuit model. The busbar multi-port model is used to build a NPC 3-level inverse inverter simulation system. Based on the principle of the formation of midpoint current and the shock resonance mechanism, the influence on midpoint current of the stray parameters of the inverter for midpoint current is analyzed. The results of the experiments demonstrate the reliability and validity of the simulation, which means this method can be used in parameter calculation and optimal design of compound busbar.
出处 《船电技术》 2014年第2期38-41,共4页 Marine Electric & Electronic Engineering
基金 国家重点基础研究发展计划973项目(2013CB035601) 国家自然科学基金项目(51077129)
关键词 复合母排 逆变器 多端口模型 中点电流 仿真计算 compound busbar, inverter, multiport model, midpoint current, simulation calculation
  • 相关文献

参考文献8

二级参考文献14

  • 1袁立强,赵争鸣,白华,李崇坚,李耀华.用于大功率变流器的IGCT功能型模型(英文)[J].中国电机工程学报,2004,24(6):65-69. 被引量:21
  • 2王正元.世纪更迭中的电力电子器件[J].电工技术学报,1999,14:22-28.
  • 3Yuan Liqiang,Zhao Zhengming,Li Chongjian.The optimization of snubbers for IGCT-based voltage source inverters.The 29th Annual Conference of the IEEE IAS,IECON2003,2003:679~682
  • 4Integrated Gate Commutated Thyristors Application Notes.ABB Report,2003
  • 5Hulasz Sandor.Optimal control of three-level PWM inverter.IEEE Transactions on Industrial Electronics,1997,44(1):96~106
  • 6Waldmeyer J,Backlund B.Design of RC Snubbers for Phase Control Applications.ABB Application Note,5SYA 2020-01,2001
  • 7Ernst.Applying IGCT Gate Unites.ABB Application Note,5SYA 2032-01,2002
  • 8Januszewski S.The failure analysis of semiconductor under running condition of power inverter.变流技术与电力拖动,2000,2:27~34
  • 9Steimer P,Apeldoorn O,Carroll E,et al.IGCT techn ology baseline and future opportunities.Transmission and Distribution Conference and Exposition,2001 IEEE/PES,2001,2:1182~1187
  • 10Sakano J,Kobayashi H,Mori M.Large SOA insulated gate controlled thyristor(IGCT)with p-base clamp.Proceedings of the 10th International Symposium on Power Semiconductor Devices and ICs,1998:155~158

共引文献58

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部