微波半导体晶体管静电放电损伤机理

Failure Mechanism of Microwave Semiconductor Transistor Caused by Electrostatic Discharge

为研究静电放电(ESD)电磁脉冲作用下微波半导体晶体管的最灵敏端对和损伤机理,采用ESD人体模型对目前广泛使用的高频低噪声微波半导体晶体管进行了ESD损伤实验。通过理论分析建立了微波半导体晶体管的ESD电热损伤模型,并通过实验验证了该模型的有效性。结果表明,该类器件对ESD最敏感的端对为集电结;ESD对该类器件的损伤模式主要为过热损伤模式,损伤机理为热二次击穿。当ESD电压较低时,PN结峰值温度超过铝硅共晶的熔融温度577℃,使器件参数退化并发生潜在性失效;当ESD电压较高时,ESD电流造成器件局部过热,PN结峰值温度超过硅的熔融温度1 415℃,使器件发生击穿烧毁。

In order to find the most sensitive end of microwave semiconductor transistor and its failure mechanism under electromagnetic pulses from electrostatic discharge （ESD）, on the basis of the ESD model of human body, we conducted an ESD failure test of high-frequency low-noise microwave semiconductor transistors widely used currently. We also built an electric-heat ESD failure model of microwave semiconductor transistor based on theoretical analysis, and experimen- tally verified the model. It is indicated that the most sensitive end to ESD is collector junction, and that the main failure mode of these devices under ESD is thermal breakdown with the failure mechanism of thermal secondary breakdown. When the voltage of ESD is low, the peak temperature of PN contact can be above 577℃, namely, the eutectic tempera- ture of aluminum silicon, resulting in the degradation of device parameters and device＇s latent failure. When the voltage is high, ESD current causes local overheating which can have the peak temperature of PN contact risen above silicon melt temperature（about 1 415 ℃） and hence cause devices breakdown or even burned.