摘要
建立了埋入式电容串扰HFSS(High Frequency Simulator Structure)仿真分析模型,基于该模型对埋入式电容在高频条件下的串扰问题进行了研究,得到了其近端串扰(S13)和远端串扰(S14),分析了信号频率、两埋入式电容间距、埋入式电容距参考层的高度及基板介电常数对串扰强度的影响。结果表明:埋入式电容串扰强度随着信号频率的变化而呈现出震荡特征;随着埋入式电容距参考层的高度及基板介电常数的增加而增大;随着两埋入式电容间距的增加而减小。基于研究结果提出了抑制串扰的埋入式电容设计方法。
The HFSS crosstalk simulation analysis model of embedded capacitors was developed, based on the model, crosstalk of the embedded capacitors was studied under the high-frequency condition; the near end crosstalk (S13) and the far end crosstalk (S14) were obtained. The effects of signal frequency, distance between two embedded capacitors, height between embedded capacitor and reference layer, and the substrate dielectric constant on crosstalk strength were studied. The results show that the crosstalk strength of the embedded capacitors shows a concussion characteristic with the signal frequency increasing; the crosstalk strength increases with increasing of the height between embedded capacitor and reference layer and the substrate dielectric constant, while decrease with the increasing of distance between two embedded capacitors. The design methods for avoiding crosstalk effect on embedded capacitor are proposed based on the research results.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2014年第4期60-63,共4页
Electronic Components And Materials
基金
广西壮族自治区自然科学基金资助项目(No.2012GXNSFAA053234
No.2013GXNSFAA019322)
四川省教育厅科研资助项目(No.13ZB0052)
关键词
埋入式电容
HFSS仿真
高频
近端串扰
远端串扰
信号完整性
embedded capacitor
HFSS simulation
high-frequency
near end crosstalk
far end crosstalk
signal integrity