SiC功率器件的开关特性探究

Exploration of switching characteristics of SiC-based power devices

与Si功率器件相比,SiC功率器件因其阻断电压高、开关频率高和工作温度高的性能特点,显示出广阔的应用前景。本文分析了SiC肖特基二极管和SiC MOSFET的开关特性,重点研究其与Si功率器件的特性与应用差异。设计制作了基于Buck变换器的测试实验样机,分别采用Si功率器件和SiC功率器件进行测试,对测试结果进行了对比分析。实验结果验证了文中分析的开关特性差异,从而为SiC功率器件的优化选择和应用提供了一定依据。

Compared with silicon devices, SiC-based power devices feature high voltage capability with low switc- hing losses and high operating temperature. The differences of switching characteristics between SiC-based devices and Si-based devices are analyzed. Then, a buck converter test bench is built, and the switching characteristics of SiC-based devices and Si-based devices are tested and compared. Experimental results verify the correctness of the above analysis, and provide design guidelines for the proper selection and application of SiC-based power devices.