摘要
集成电路多层铜布线平坦化中,CMP工艺参数的配置是决定抛光表面状态和平坦化程度的重要因素。本文研究了碱性介质下铜CMP机理,深入分析了CMP系统中影响抛光表面状态的诸多工艺因素。在此基础上设计了多层铜布线CMP工艺的优化实验,有效地解决了划伤,蚀坑等表面缺陷问题,实验测定表面粗糙度数据较为理想,获得了良好的实验效果。
Adjusting technological parameters of CMP is very important in the planarization technique of copper multilayer interconnec- tion. It determines the polished surface state and planarization. In this paper, the copper CMP＇s mechanism under alkaline is re- searched. Some influencing factors of CMP on the polished surface state are analyzed. On this basis, optimization experiment on CMP of copper multilayer interconnection is designed. Some problems of surface defect are resolved, such as scratches and etching pits. The data of surface roughness in experiment is ideal, and the experimental results are satisfactory.
出处
《北华航天工业学院学报》
CAS
2014年第1期7-9,共3页
Journal of North China Institute of Aerospace Engineering
基金
北华航天工业学院科研基金项目(KY-2010-08)
