摘要
本文研究了硅纳米晶粒MOSFET存储器的荷电特征 .器件阈值电压偏移达 1 8V以上 ,并随着沟道宽度的变窄而增加 ,而与沟道长度基本无关 .同时 ,阈值涨落也随宽度的变窄而增大 .在 2 0～ 30 0K测量温度范围内 ,器件阈值偏移和电荷的存储特性几乎不随温度变化 ,说明荷电过程主要由直接隧穿决定 .进一步 ,在最窄沟道器件中观察到单电荷的荷电过程 .
The charging characteristics of the MOSFET memory based on Si nanocrystals with various channel dimensions are investigated in the temperature range of 20-300 K. Large threshold voltage shifts up to 1.8 V are obtained, being obviously dependent on the channel width, and independent of the channel length. It is experimentally found that the threshold voltage shift and charge retention characteristics are almost independent of temperature. Single electron/hole charge/discharge processes are observed in the device with the narrowest channel.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2001年第2期145-147,共3页
Acta Electronica Sinica
基金
国家自然科学基金! (No .6970 60 0 4 )
江苏省自然科学基金! (No.BK990 4 9)
关键词
硅纳米晶粒
存储器
MOSFET
荷电特征
Data storage equipment
Nanostructured materials
Silicon
Temperature
Threshold voltage
