摘要
本文描述了使用共面微波探针的半导体芯片在片测试技术 .设计研制出的多种微波探针性能参数稳定 ,使用寿命在十万次以上 ,用于在片检测各种GaAs共面集成电路芯片 .触头排列为GSG的微波探针 ,- 3dB带宽及反射损耗分别为 14GHz和小于 - 10dB .
We present an on-wafer measurement technique of semiconductor wafer using special coplanar microwave probes. The probe parameters are repeatable enough for S-parameter measurements and the probe life is with 100,000 contacts guaranteed. The multi-contact microwave wafer probe is developed for on-wafer testing and sifting of GaAs integrated circuits with coplanar type. The insertion loss of microwave probe with a GSG footprint pattern is typically less than 3.0 dB, and the return loss is at least 10 dB at frequencies below 14 GHz.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2001年第2期222-224,共3页
Acta Electronica Sinica
基金
博士点基金
集成光电子学国家联合重点实验室开放课题项目
关键词
微波探针
在片测试
半导体集成电路
Life cycle
Mathematical transformations
Measurements
Microwave integrated circuits
Optimization
Probes