摘要
用MBE(分子束外延 ,MolecularBeamEpitaxy)生长的材料研制了在低温工作的SiGe/SiHBT(异质结双极型晶体管 ,HeterojunctionBipolarTransistor) .其在液氮下的直流增益hfe(Ic/Ib)为 16 0 0 0 ,交流增益 β(ΔIc/ΔIb)为 2 6 0 0 0 ,分别比室温增益提高 5 1和 73倍 .测试了该HBT直流特性从室温到液氮范围内随温度的变化 ,并作了分析讨论 .
The SiGe/Si HBTs operating at low temperature were fabricated. The current gain hfe (Ic/Ib) over 16000 and β (δIc/δIb) over 26000 are observed at 77 K, exceeding those at 290 K by about 51 and 73 times, respectively. The temperature dependence of DC characteristics of the HBT between 290 K and 77 K was described and analyzed. The departure from theoretical expectation of this dependence at very low temperature was discussed.
出处
《电子学报》
EI
CAS
CSCD
北大核心
2001年第2期285-286,274,共3页
Acta Electronica Sinica
基金
国家"863"计划! (No .863 30 7 1 5 4(0 6) )
国家973项目! (No .G2 0 0 0 0 683 0 2 )
国家自然科学基金! (No .698760 0 4 )
关键词
SIGE/SI
HBT
分子束外延
异质结双极晶体管
低温电子学
Electric current control
Gain control
Low temperature properties
Low temperature testing
Semiconductor device manufacture
