基于SOI工艺集成电路ESD保护网络分析与设计

Analyze and Design of ESD Protection Network for Integrated Circuit on SOI Process

由于SOI(Silicon-On-Insulator)工艺采用氧化物进行全介质隔离,而氧化物是热的不良导体,因此SOI ESD器件的散热问题使得SOI电路的ESD保护与设计遇到了新的挑战。阐述了一款基于部分耗尽SOI(PD SOI)工艺的数字信号处理电路(DSP)的ESD设计理念和方法,并且通过ESD测试、TLP分析等方法对其ESD保护网络进行分析,找出ESD网络设计的薄弱环节。通过对ESD器件与保护网络的设计优化,并经流片及实验验证,较大幅度地提高了电路的ESD保护性能。

Oxide is used for Full-Isolation on SOI technology, but its low thermal conductivity reduces the protection level offered for Electrostatic Discharge（ESD）. The protection design of SOI Integrated Circuit is up against a new challenge. In the paper, build up a ESD protection network for a Digital Signal Processing （DSP）on partial deplete（PD）SOI process, ifnd out the weakness of the network by ESD Test/TLP and correct it. As a result, the ESD protection level of the circuit was upgraded obviously.