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电荷共享效应的RESURF横向功率器件击穿电压模型

Breakdown Model of RESURF Lateral Power Devices Based on Charge-Sharing Effect
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摘要 分析降低表面场(reduced surface field,RESURF)横向功率器件耐压机理,假定共享区电荷沿对角线分配给横向和纵向耗尽区,建立了一个新的RESURF横向功率器件击穿电压模型.该模型能准确描述漂移区全耗尽和不全耗尽情况下的耐压特性,并具有数学表达式简单以及物理概念清晰的优点.在此基础上,导出了一个新的RESURF判据,进而给出了一个用于指导器件设计的漂移区剂量上下限.解析结果与实验结果吻合较好,验证了击穿电压模型和RESURF判据的正确性. A breakdown model for RESURF lateral power device is developed. Based on the analysis of the breakdown mechanism in RESURF lateral power device, charges in the drift region are allocated to lateral and vertical junctions along the diagonal of the sharing area. This model can be used to investigate breakdown characteristics of the device when the drift region is fully or partially depleted. Besides, the model provides simple expressions with clear physical concepts. A new RESURF criterion is also derived to quantitate the upper and lower limits, which is useful to the design of the structure parameters. General agreements exist between the modelin~ results and the reported experimental results.
出处 《应用科学学报》 CAS CSCD 北大核心 2014年第2期209-214,共6页 Journal of Applied Sciences
基金 国家自然科学基金(No.61076073) 教育部博士点基金(No.20133223110003)资助
关键词 降低表面场 电荷共享 击穿电压 一维模型 reduced surface field (RESURF), charge-sharing, breakdown voltage, one-dimensional model
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参考文献19

  • 1APPELS J, VAES H, VERHOEVEN J. High voltage thin layer devices [J]: Electron Devices Meeting, 1979, 25: 238-241.
  • 2APPELS J A, COLLET M G, HART P A H, VAES H M J, VERHOEVEN J F C M. Thin layer high voltage devices [J]. Philips Journal of Research, 1980, 35(1): 1-5.
  • 3IMAM M, QUDDUS M, ADAMS J, HOSSAIN Z. Effi- cacy of charge sharing in reshaping the surface elec- tric field in high voltage lateral RESURF devices [J]. IEEE Transactions Electron Devices, 2004, 51(1): 141-148.
  • 4OROUJI A A, MEHRAD M. Breakdown voltage im- provement of LDMOSs by charge balancing: an in- serted P-layer in trench oxide (IPT-LDMOS) [J]. Su- perlattices and Microstructures, 2012, 51: 412-420.
  • 5SHIMAMOTO S, YANAGIDA Y, SHIRAKAWA S, MIYAKOSHI K, OSHIMA T, SAKANO J, WADA S, NOGUCm J. High-performance p-channel LDMOS transistors and wide-range voltage platform technol- ogy using novel p-channel structure [J]. IEEE Trans- actions on Electron Devices, 2013, 60(1): 360-365.
  • 6LI Q, WANG W D, LI H O, WEI X M. High voltage silicon power device structure with substrate bias [J]. Electronics Letters, 2011, 47(25): 1394-1396.
  • 7CHANG Y H, CHANG C H. Improving an LDMOST by variation of lateral doping on epitaxial-layer drift re- gion [J]. Microelectronics Reliability, 2011, 51: 2059- 2063.
  • 8李小刚,冯志成,张正元,胡明雨.A charge allocating model for the breakdown voltage calculation and optimization of the lateral RESURF devices[J].Journal of Semiconductors,2009,30(3):59-62. 被引量:1
  • 9COLAK S. Effects of drift region parameters on the static properties of power LDMOST [J]. IEEE Trans- actions on electron devices, 1981, ED-28(12): 1455- 1465.
  • 10CHUNG S K, HANS Y, SHIN J C, CHUNG S K, HAN S Y, SHIN J C, CHOI Y I, KIM S B. An analyti- cal model for minimum drift region length of SOI RESURF diodes [J]. IEEE Electron Device Letters, 1996, 17(1): 22-24.

二级参考文献7

  • 1Appels J A, Vaes H M J. High voltage thin layer devices (RESURF devices). IEDM Tech Digest, 1979:238
  • 2Ludikhuize A W. A review of RESURF technology. ISPSD, 2000
  • 3Appels J A, Collet M, Hart P, et al. Thin layer high voltage devices (RESURF devices). Philips J Res, 1980, 35:1
  • 4Vaes H, Appels J. High voltage, high current lateral devices. IEDM Tech Dig, 1980:87
  • 5Iman M, Quddus M, Adams J, et al. Efficacy of charge sharing in reshaping the surface electric field in high-voltage lateral RESURF devices. IEEE Trans Electron Devices, 2004, 51(1): 141
  • 6Wildi E, Gray P, Chow T, et al. Modeling and process of implanted RESURF type devices. IEDM, 1982:268
  • 7Sze S M. Physics of semiconductor devices. New York: Wiley, 1981

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