期刊文献+

InAs/GaAs far infrared quantum ring inter-subband photodetector

InAs/GaAs far infrared quantum ring inter-subband photodetector
原文传递
导出
摘要 In this paper, we presented a numerical analysis of absorption coefficient, dark current and specific detectivity for InAs/GaAs quantum ring inter-subband photodetector (QRIP). 3D SchrSdinger equation was solved using finite difference method and based on effective mass approximation. Dimensions of quantum ring (QR) were considered that inter-subband transition was to be accomplished for radiations of 20 μm. Resonant tunneling (RT) barriers were designed with tunneling probability of unity for electrons with energy of 0.062 meV to lower dark current of conventional QRIP. Numerical analyses show that inclusion of RT barriers can reduce dark current for about two orders of magnitude. Furthermore, specific detectivities for conventional QRIP and RToQRIP were calculated respectively, and results at different temperatures were compared. It is suggested that specific detectivity for RT-QRIP is one order of magnitude higher than that for conventional QRIP. It is suggested that RT barriers considerably improve the specific detectivity of conventional QRIP at different temperatures. In this paper, we presented a numerical analysis of absorption coefficient, dark current and specific detectivity for InAs/GaAs quantum ring inter-subband photodetector (QRIP). 3D SchrSdinger equation was solved using finite difference method and based on effective mass approximation. Dimensions of quantum ring (QR) were considered that inter-subband transition was to be accomplished for radiations of 20 μm. Resonant tunneling (RT) barriers were designed with tunneling probability of unity for electrons with energy of 0.062 meV to lower dark current of conventional QRIP. Numerical analyses show that inclusion of RT barriers can reduce dark current for about two orders of magnitude. Furthermore, specific detectivities for conventional QRIP and RToQRIP were calculated respectively, and results at different temperatures were compared. It is suggested that specific detectivity for RT-QRIP is one order of magnitude higher than that for conventional QRIP. It is suggested that RT barriers considerably improve the specific detectivity of conventional QRIP at different temperatures.
出处 《Frontiers of Optoelectronics》 EI CSCD 2014年第1期84-90,共7页 光电子前沿(英文版)
关键词 quantum ring inter-subband photodetector(QRIP) dark current spacefic detectivity resonant tunnel-ing (RT) quantum ring inter-subband photodetector(QRIP), dark current, spacefic detectivity, resonant tunnel-ing (RT)
  • 相关文献

参考文献15

  • 1Hsu B C, Lin C H, Kuo P S, Chang S, Chen P, Liu C, Lu J H, Kuan C H. Novel MIS Ge-Si quantum-dot infrared photodetectors. Electron Device Letters, IEEE, 2004, 25(8): 544-546.
  • 2Dai J H, Lee J H, Lin Y L, Lee S C. In(Ga)As quantum rings for terahertz detectors. Japanese Journal of Applied Physics, 2008, 47 (4): 2924-2926.
  • 3Ling H S, Wang S Y, Lee C P, Lo M C. Characteristics ofIn(Ga)As quantum ring infrared photodetectors. Journal of Applied Physics, 2009, 105(3): 034504-1-034504-4.
  • 4Lee J H, Dai J H, Chan C F, Lee S C. In(Ga)As quantum ring terahertz photodetector with cutoff wavelength at 175 urn. Photonics Technology Letters, IEEE, 2009, 21(11): 721-723.
  • 5Bhowmick S, Huang G, Guo W, Lee C S, Bhattacharya P, Ariyawansa G, Perera A G U. High-performance quantum ring detector for the 1-3 terahertz range. Applied Physics Letters, 2010, 96(23): 231103-1-231103-3.
  • 6Huang G, Guo W, Bhattacharya P, Ariyawansa G, Perera A G U. A quantum ring terahertz detector with resonant tunnel barriers. Applied Physics Letters, 2009, 94(10): 101115-1-1101115-3.
  • 7Li S S, Xia J B. Electronic states of InAs/GaAs quantum ring. Journal of Applied Physics, 2001, 89(6): 3434-3437.
  • 8Chen J H, Liu J L. A numerical method for exact diagonalization of semiconductor quantum dot model. Computer Physics Communications, 2010, 181(5): 937-946.
  • 9Kochman B, Stiff-Roberts A D, Chakrabarti S, Phillips J D, Krishna S, Singh J, Bhattacharya P. Absorption, carrier lifetime, and gain in InAs-GaAs quantum-dot infrared photodetectors. IEEE Journal of Quantum Electronics, 2003, 39(3): 459-467.
  • 10Mir A, Ahmadi V. Design and analysis of a new structure of InAsl GaAs QDIP for 8-12/-lm infrared windows with low dark current. Journal of Modem Optics, 2009, 56(15): 1704-1712.

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部