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Radiation tolerance studies on the VA32 ASIC for DAMPE BGO calorimeter 被引量:2

Radiation tolerance studies on the VA32 ASIC for DAMPE BGO calorimeter
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摘要 The Dark Matter Particle Explorer(DAMPE) is being constructed as a scientific satellite to observe high energy cosmic rays in space.As a crucial detector of DAMPE,the BGO calorimeter consists of 1848 PMT dynode signals which bring difficulties in front-end electronics on the space-limited and power-limited satellite platform.To overcome the challenge,a low-noise,low-power and high-integration ASIC chip,named VA32HDR14.2,is taken into account.In order to evaluate the radiation tolerance of the chip in space radiation environment,both single event effect(SEE) and total ionizing dose(TID) tests were performed.The SEE test result shows that the effective linear energy transfer(LET) threshold of single event latch-up(SEL) of the chip is around 23.0 MeVcm^2/mg,which is relatively sensitive,thus protection methods must be taken in the electronics design.The TID test result shows that the TID performance of the chip is higher than 25 Krad(Si),which satisfies the design specification. The Dark Matter Particle Explorer (DAMPE) is being constructed as a scientific satellite to observe high en- ergy cosmic rays in space. As a crucial detector of DAMPE, the BGO calorimeter consists of 1848 PMT dynode signals which bring difficulties in front-end electronics on the space-limited and power-limited satellite platform. To overcome the challenge, a low-noise, low-power and high-integration ASIC chip, named VA32HDR14.2, is taken into account. In order to evaluate the radiation tolerance of the chip in space radiation environment, both single event effect (SEE) and total ionizing dose (TID) tests were performed. The SEE test result shows that the effective linear energy transfer (LET) threshold of single event latch-up (SEL) of the chip is around 23.0 MeV- cm2/mg, which is relatively sensitive, thus protection methods must be taken in the electronics design, The TID test result shows that the TID performance of the chip is higher than 25 Krad(Si), which satisfies the design specification.
出处 《Nuclear Science and Techniques》 SCIE CAS CSCD 2014年第1期33-37,共5页 核技术(英文)
基金 Supported by the Strategic Priority Research Program on Space Science,the Chinese Academy of Sciences(No.XDA04040202-4)
关键词 ASIC芯片 阻尼器 量热仪 BGO 耐辐射 耐受性 空间辐射环境 粒子探测器 Radiation effects, SEE, TID, ASIC, VA32HDR14.2
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