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NdIn3-xMnx合金化合物的结构和磁电输运性质

Structure and electromagnetic transport properties of compound NdIn_(3-x)Mn_x
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摘要 本文应用非自耗真空电弧炉制备稀土NdIn3-xMnx(x=0,0.2,0.3,0.5)合金化合物.采用X射线粉末衍射(XRD)研究其相成分和结构,利用TREOR对衍射数据进行指标化,采用Rietveld全谱拟合分析方法测定了NdIn3-xMnx的晶体结构.结果表明:当x≤0.3时,为具有AuCu3型结构,空间群为Pm3m,Z=1,点阵常数a=4.640(6)-4.738(7);当x=0.5时,化合物中出现杂相In.在x≤0.3固溶区,Mn原子部分取代In原子占据3c(0.5,0.5,0)晶位,Nd原子占据1a(0,0,0)晶位.NdIn3-xMnx的磁化曲线显示:当x≤0.2时,呈现出顺磁结构;当x=0.3时,呈现出弱铁磁性和顺磁性的混合.NdIn2.7Mn0.3电阻率在0–300 K区间变化呈半金属性. NdIn3-xMnx compounds have been prepared by arc melting, and their phase structures have been determined using powder X-ray diffraction. The crystal structures of NdIn3-xMnx are determined with Rietveld's method. It shows that NdIn3-xMnx crystallize in cubic AuCu3(x〈0.3) type structure with space group of Pm-3m and Z=1. The lattice parameters are a=4.641(6)-4.738(7) A. Nd atom occupies the la (0, 0, 0) position; In and Mn atoms are at the 3c(0.5, 0.5, 0) position. NdIn3-xMnx show mixture characters of weak ferromagnetic and paramagnetic properties for x=0.3 and paramagnetic characteristics for x〈0.3 at room temperature. The resistivity increases from 2.23 Ωμm to 2.53 Ωμm with increasing temperature from 0 to 300 K. The resistivity follows an equation of p=p0+aT^n, where n〈2, it shows that Ndln3-xMnx intermetallic compounds are semimetals.
机构地区 华北电力大学
出处 《中国科学:物理学、力学、天文学》 CSCD 北大核心 2014年第4期425-430,共6页 Scientia Sinica Physica,Mechanica & Astronomica
基金 国家自然科学基金资助项目(批准号:11274110)
关键词 NdIn3-xMnx RIETVELD结构精修 磁电输运 NdIn3-xMnx, rietveld refinement, electromagnetic transport
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参考文献27

  • 1DiVincenzo D P. Quantum computation. Science, 1995, 270(5234): 255-261.
  • 2Molnar S V, Read D. New materials for semiconductor spin-electronics. Proc IEEE, 2003, 91(5): 715-726.
  • 3Ahn K Y, Shafer M. Relationship between stoichiometry and properties of EuO films. J Appl Phys, 1970, 41(3) : 1260-1262.
  • 4Zhao J H, Deng J J, Zheng H Z. Diluted magnetic semiconductors (in Chinese). Prog Phys, 2007, 27:135-141.
  • 5Jeon H C, Kang T, Kim T, et al. Enhancement of the magnetic properties in (GaMn) N thin films due to Mn-delta doping. Appl Phys Lett, 2005, 87:092501.
  • 6Ayoub J P, Favre L, Ronda A, et al. Structural and magnetic properties of GeMn diluted magnetic semiconductor. Mat Sci Semicond Process, 2006, 9(4): 832-835.
  • 7Ohno H. Making nonmagnetic semiconductors ferromagnetic. Science, 1998, 281 (5379): 951-956.
  • 8Ohno Y, Young D, Beschoten B A, et al. Electrical spin injection in a ferromagnetic semiconductor heterostructure. Nature, 1999, 402: 790-792.
  • 9Ohno H, Chiba D, Matsukura F, et al. Electric-field control of ferromagnetism. Nature, 2000, 408:944-946.
  • 10Dietl T, Ohno H, Matsukura F, et al. Zener model description of ferromagnetism in zinc blende magnetic semiconductors. Science, 2000, 287:1019-1022.

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