期刊文献+

氧化锰对铌锑锆钛酸铅(PNSZT)压电陶瓷性能的影响 被引量:1

THE INFLUENCE OF MANGANESE OXIDE ON THE PROPERTY OF LEAD NIOBIUM-STIBIUM ZIRCONATE-TITANATE PIEZOELECTRIC CERAMICS
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摘要 本文研究了氧化锰对铌锑锆钛酸铅压电陶瓷性能的影响 ,探讨了氧化锰的作用机理 。 It has been investigated that the amount of doped MnO affectted mechanical electric properties of Lead Niobium-stibium Zirconate-Titanate(PNSZT) piezoelectric ceramics,and discussed the affectting mechanism of MnO on the PNSZT ceramics. It is provided the theoretical basis for modified Lead Zirconate-titanate piezoelectric ceramics with MnO.
出处 《中国陶瓷》 CAS CSCD 北大核心 2000年第6期12-13,共2页 China Ceramics
关键词 氧化锰 锆钛酸铅 陶瓷 影响 manganese oxide Lead Zirconate-titanate ceramics influence
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参考文献5

  • 1Dai G H,The 4th National conference on position Annihilation,1990年
  • 2黄新友,硕士学位论文,1989年
  • 3陈俊彦(译),压电陶瓷材料,1982年
  • 4李标荣,无机介电材料,1980年
  • 5中国科学院上海硅酸盐研究所(译),铁电材料及其应用(译文集).12,1973年

同被引文献15

  • 1李宝山,朱志刚,李国荣,殷庆瑞,丁爱丽.铌锰锆钛酸铅铁电陶瓷电滞回线的温度和频率响应[J].物理学报,2005,54(2):939-943. 被引量:5
  • 2杜红亮,杜红娜,周万城,裴志斌,屈绍波.锰掺杂对PNW-PMS-PZT压电陶瓷结构和性能的影响[J].硅酸盐学报,2005,33(6):776-779. 被引量:12
  • 3KIM S K,SEO Y H.Fabrication and characterization of the piezoelectric microtransformer based on microelectromechanical systems[J].Appl Phys Lett,2006,88(26):263510.
  • 4THIELE C,BEYREUTHER E,LIN W M,et al.Piezoelectrically induced resistance modulations in La0.7Sr0.3MnO3/Pb(Zr,Ti)O3 field effect devices[J].Appl Phys Lett,2005,87:162512-162516.
  • 5CHANG C Y,JUAN T P C,LEE J Y M.Fabrication and characterization of metal-ferroelectric (PbZr0.53Ti0.47O3)-insulator (Dy2O3)-semiconductor capacitors for nonvolatile memory applications[J].Appl Phys Lett,2006,88(7):72917.
  • 6SCOTT J F,ARAUJO C A.Ferroelectric memories[J].Sciences,1989,246:1400-1405.
  • 7CARL K,HARDTL K H.Electrical after-effects in Pb(Ti,Zr)O3 ceramics[J].Ferroelectrics,1978,17:473-477.
  • 8PAN M J,PARK S E,PARK C W,et al.Superoxidation and electrochemical reactions during switching in Pb(Zr,Ti)O3 ceramics[J].J Am Ceram Soc,1996,79:2971-2974.
  • 9LENTEMH,PICININ A.,RINO J P,et al.90°domain wall relaxation and frequency dependence of the coercive field in the ferroelectric switching process[J].J Appl Phys,2004,95(5):2646-2653.
  • 10HARDTL K H.Defect structure of PLZT doped with Mn,Fe and Al[J].J Am Ceram Soc,1981,54(5):283-287.

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