摘要
In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor （MC） circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossing point location of MC circuit is given. Then the example of MC with linear memristance-versus-charge state map is demonstrated to discuss the drift property of cross-point location, caused by the frequency and capacitance value.
In this paper, the crossing point property of the i-v hysteresis curve in a memristor-capacitor （MC） circuit is analyzed. First, the ideal passive memristor on the crossing point property of i-v hysteresis curve is studied. Based on the analysis, the analytical derivation with respect to the crossing point location of MC circuit is given. Then the example of MC with linear memristance-versus-charge state map is demonstrated to discuss the drift property of cross-point location, caused by the frequency and capacitance value.
基金
Project supported by the National Natural Science Foundation of China(Grant No.61171017)
