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P型非晶硅薄膜制备及其在HIT太阳电池中应用 被引量：3

Fabrication of P-type a-Si∶ H Thin Films and Its Application in HIT Solar Cells
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摘要 采用RF-PECVD沉积技术制备P型非晶硅薄膜材料,研究硼烷浓度和加热温度对薄膜性能的影响。通过对两者优化,制备出了宽光学带隙、高电导率和致密性较好的P型非晶硅材料。作为窗口层应用到HIT太阳电池中,对其厚度进行优化,在N型单晶硅衬底上制备出了效率为14.28%的HIT太阳电池。 The influence of borane concentration and heating temperature on the properties of a-Si： H thin films deposited by RF plasma enhanced chemical vapor deposition have been studied. Under the optimum conditions p-a-Si： H thin films with wide optical bandgap, high conductivity and good microstucture were obtained. As window layers applied in HIT （heterojunction with intrinsic thin layer） solar cells, the conversion efficiency of 14.28% on N-tyoe Si wafer was achieved bv oDtimizing the thickness of P-la^er.
作者 齐晓光 杨瑞霞 雷青松 薛俊明
机构地区 河北工业大学信息工程学院 河北汉盛光电科技有限公司
出处 《人工晶体学报》 EI CAS CSCD 北大核心 2014年第2期280-284,共5页 Journal of Synthetic Crystals
关键词 RF-PECVD 非晶硅薄膜 硼烷浓度 加热温度 HIT太阳电池 RF-PECVD amorphous silicon thin film borane concentration heating temperature HITsolar cell
分类号 O484.4 [理学—固体物理]
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参考文献13

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共引文献19

同被引文献43

  • 1Xiao SQ, Xu SY. High-Efficiency Silicon Solar Cells-Materialsand Devices Physics [J]. Critical Reviews in Solid State andMaterials Sciences, 2014, 39(4): 277-317.
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二级引证文献10

人工晶体学报
2014年 第2期

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