摘要
金刚石线锯切割多晶硅片表面存在两种尺度的切割痕纹：由锯线往复运动形成的周期在亚毫米尺度的往复纹，和由金刚石划出的宽度在微米尺度的划痕。金刚石切割硅片的微观粗糙度比砂浆切割硅片小～25％。金刚石切割硅片相对粗糙表观以及往复纹的呈现都来自于光滑划痕的视觉增强作用。酸刻蚀制绒不能消除金刚石切割硅片表面切割痕纹；碱刻蚀只能消除部分晶粒之上的切割痕纹。尝试了一种气相酸刻蚀方法，取得了彻底消除金刚石切割硅片表面切割痕纹的效果，同时获得了良好的制绒效果，但其均匀性有待改善。
Two types of cutting marks on diamond-cut muhicrystalline silicon wafers, the sub-millimeter scale rounding fringes caused by round-running of the wire cut, and the micron scale scratches caused by scribing of the diamond tips, are identified. The micro-roughness of diamond-cut wafers is actually ～ 25 % smaller than that of slurry-cut wafers. The reason for the relatively rough appearance of diamond-cut wafers, and for visibility of the rounding fringes, under naked eyes, is the visual enhancement from the scratches, which are smooth and shiny. Acid-etching texturization fails to remove the cutting marks on the diamond-cut silicon wafers; Base-etching can only remove the cutting marks on some grains. A gas etching method has been attempted, and complete removal of the cutting marks has been achieved, along with a fine surface texturization. However, uniformity of this method remains to be improved.
出处
《人工晶体学报》
EI
CAS
CSCD
北大核心
2014年第2期314-320,共7页
Journal of Synthetic Crystals
基金
江西省光伏材料优势科技创新团队项目
关键词
金刚石线锯
多晶硅
切割痕
制绒
diamond wire cut
multicrystalline silicon
cutting mark
texturization
