10 Gbit/s 850 nm pin光电二极管

10 Gbit/s 850 nm pin Photoelectric Diode

GaAs pin光电二极管在数据通信领域发挥着重要的作用,在综合考虑了高速光电探测器的频率特性和响应度的基础上,给出了AlGaAs/GaAs pin光电二极管结构参数的最优化设计,使其在频率响应特性上满足10 Gbit/s的要求。着重研究了在半导体制作工艺中所涉及的光刻、腐蚀、表面钝化以及欧姆接触等问题,研制出暗电流小、响应速率高、响应度高而且可靠性良好的短波长高速pin光电二极管。在产品应用之前的可靠性测试中,老化时间大于2 000 h的情况下仍能保持良好的暗电流特性,满足工业化生产的条件。

GaAs pin photodetector plays an important role in high-speed data communication field. In consideration of the frequency characteristic of the high-speed photodetector and the responsibility, the A1GaAs/GaAs pin photodiode structural parameters optimization design was given, satisfying the demand of 10 Gbit/s on the frequency response. In the semiconductor production process, the problems such as the lithography, corrosion, surface passivation and ohmic contact were studied. The short wavelength high-speed pin photoelectric diode was developed which had good performances, such as the low dark current, high response speed, high responsibility and good reliability. In the product reliability testing before the application, the pin diode had the good performance of the dark current while the aging time was more than 2 000 h. The results show that the industrial production conditions are satisfied.