摘要
GaAs/AlGaAs核-壳结构纳米线是制作金属-半导体-金属(MSM)型高速光电探测器最简洁有效的光电材料之一。采用金属有机化学气相沉积(MOCVD)设备,在GaAs(111)B衬底上开展了GaAs/AlGaAs核-壳结构纳米线的生长研究,用场发射扫描电子显微镜(SEM)和微区光荧光谱仪(PL)对制备的GaAs/AlGaAs核-壳结构纳米线样品进行了测试分析。采用已优化的GaAs/AlGaAs核-壳结构纳米线的生长工艺参数,主要研究了AlGaAs壳材料的生长机制,获得了高质量的AlGaAs壳材料,AlGaAs壳材料生长速率约为50 nm/min,Al的原子数分数为14%。这些结果为将来多异质结构纳米线的生长和光电探测器的制备奠定了基础。
GaAs/A1GaAs core-shell nanowire is one of the most promising materials for metal-semi- conductor-metal （MSM） photodetector. The core-shell/GaAs-A1GaAs nanowires were grown on GaAs （ 111） B substrates by metal organic chemical vapor deposition （MOCVD）. The nanowires were charac- terized by the field emission-scanning electron microscopy （SEM） and micro-photoluminescenee （PL）. By the optimized process parameters, the growth mechanism of the A1GaAs shell was studied, and the high quality A1GaAs shell material was obtained. The growth rate of the A1GaAs shell is about 50 nm/min, and the atom fraction of A1 in the A1GaAs shell is 14%. All these results laid the foundation of further multi-heterostrueture nanowire growth and photodetector fabrication.
出处
《半导体技术》
CAS
CSCD
北大核心
2014年第4期289-293,共5页
Semiconductor Technology
基金
国家自然科学基金资助项目(11372197)
