半导体纳米薄膜导电特性测试

Test of Semiconductor Nano-film Conductive Characteristics

通过对某些测试方法的改进,设计了综合测试方案,以达到最终实现对薄膜样品膜面、膜厚两个方向上电导率和Seebeck系数的测试。制备了薄膜样品。应用电子束微影技术,在矽晶片表面制造纳米孔洞阵列结构,以改善半导体介面性质并增进其导电性,研究结果显示,在矽晶片表面建构方型孔洞阵列,且在孔洞够小的情况下,与未建构纳米孔洞而只做退火处理的对照样品相比,有效降低了导体的接触电阻,在金属导体电接触中,拥有更加优良的导电性,即在低温制程的中小孔洞阵列结构能取代退火处理。纳米科技有效增进半导体薄膜接点导电特性。

Nanotechnology is regarded as the dominant technology in the development of science and technology trends. By improvement and innovation of some test methods, the paper designs a comprehensive testing program to achieve the ultimate realization of the membrane surface, thickness of the film sample conductivity and Seebeck coefficient test in both directions. The film samples were prepared. By applying electron beam lithography, we manufacture nanoporous array structure on the silicon surface to improve semiconductor interface properties and enhance their electrical conductivity. The results show that the square hole array constructed on the silicon surface, can effectively reduce the contact resistance of the conductor by comparing with unconstructed nanoporous, if the pores small enough, the metal conductor has more excellent conductivity in electrical contacts.