BiInO_3基压电膜的脉冲激光沉积法制备及其性能

Preparation and properties of BiInO_3-based piezoelectric thin films deposited by pulsed laser deposition

以PbTiO3为模板,采用脉冲激光沉积(pulsed laser deposition,PLD)法制备了0.20BiInO3-0.80PbTiO3(20BI-PT)高温压电薄膜.X射线衍射谱显示20BI-PT样品的[100]峰出现了明显的劈裂,表明样品具有更高的四方对称性.场发射扫描电镜照片显示20BI-PT样品中出现了部分[111]取向的三角形晶粒.20BI-PT样品的铁电剩余极化(Pr)为0.28C·m-2,矫顽场(Ec)为12MV·m-1.20BI-PT样品的横向压电系数(e31,f)为(-4.7±0.6)C·m-2.介电温度谱显示20BI-PT样品的居里温度达590℃,且介电峰没有明显的频率依赖性.

Using PbTiOa as template, 0.20BilnO3 - 0.80PbTiO3 （20BI - PT） high temperature thin films were deposited by PLD. X-ray diffraction patterns show that the [100] peak splits which indi- cates the higher tetragonality in 20BI - PT samples. FESEM pictures show there are some I-Ill]- oriented grains inlaid in the faceted grains. The remanent polarization （Pr） and coercive field （Ec） of 20BI-PT are ~ 0.28 C- m-2 and--12 MV ~ m-1, respectively. The transverse piezoelectric coefficient （eal.f） of 20BI -PT is （--4.7±0.6）℃ m-2. The temperature dependence of dielectric permittivity of 20BI -PT shows the high Curie temperature of 590 ~C, with weak frequency depend- ence.