MIS/IL p-Si太阳电池的几种低温表面钝化

STUDY ON SURFACE PASSIVATION OF MIS/IL p-Si SOLAR CELLS

对P 硅基体的MOS ,MNS ,MNOS 3种钝化系统通过C V特性测试和电性能分析 ,系统比较了不同结构及在不同的工艺条件下的介面态 ,介面固定正电荷和漏电流等参数。结果表明对于MIS/IL p Si太阳电池 ,通过工艺优化 ,MNOS可以发挥良好的表面钝化和存储固定正电荷的功能。

Based on the solar grade silicon MOS, MNS and MNOS systems have been analysed and the interface states, fixed positive charges and leak current have been compared by C-V measurement, and the effects of temperature and deposition on fixed positive charge density of MNOS, as well as its relationship between fixed charge density and annealing time are also investigated. Results show that the structure of MNOS is advanced in surface passivation and storage of the fixed charges for MIS/IL p-Si solar cells.