摘要
利用蒸发和溅射工艺 ,研究了 Cd Se- TFT的制作 ,特别对掺 In的 Cd Se- TFT的电性能进行了研究。实验中观察到 Cd Se掺 In后 ,TFT的 I - V特性明显得到改善 ,得到了性能稳定的 TFT器件。利用半导体掺杂理论对此现象进行了解释。
CdSe TFT was prepared with evaporation and sputtering processes. It was observed that the I-V characteristics of TFT were improved when In was doped into CdSe. The result was explained by the dopant theory of semiconductor.
出处
《液晶与显示》
CAS
CSCD
2000年第3期196-201,共6页
Chinese Journal of Liquid Crystals and Displays
基金
国家"8 63"资助项目!( 71 5-0 0 3 -0 0 70 )
