摘要
本文介绍了采用光刻技术制备的一种新型的导电基底 ,它的面电阻≤ 1 0Ω,透过率约为 89% .在该基底上研制出的选通式象增强器 ,可实现选通时间在 ns级以上的高速选通 ,适用于微光、瞬时多通道高速光谱分析系统和高速摄影系统 .
A new type of conduct electricity substrate made by photoetching technology is developed,which resistance is lower than 10Ω and transparency is about 89%.The gatable image intensifier with this substrate can meet the requirement of ns high speed gating,is suitable for shimmer or transient multi channel high speed spectrum analysis system and high speed camera system.
出处
《光子学报》
EI
CAS
CSCD
2000年第9期861-864,共4页
Acta Photonica Sinica
关键词
导电基底
光刻
象增强器
选通式
Conduct electricity substrate
Photoetching
Gating
Image intensifier
