摘要
Wide bandgap(3.37 eV)and high excitonbinding energy of ZnO(60 meV)make it a promising candidate for ultraviolet light-emitting diodes(LEDs)and low-threshold lasing diodes(LDs).However,the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p–n homojunction LEDs.An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials(such as p-GaN)or building new device structures.In this article,we will briefly review the recent progress in ZnO LEDs/LDs based on p–n heterostructures and metal–insulatorsemiconductor heterostructures.Some methods to improve device efficiency are also introduced in detail,including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.
Wide bandgap （3.37 eV） and high exciton- binding energy of ZnO （60 meV） make it a promising candidate for ultraviolet light-emitting diodes （LEDs） and low-threshold lasing diodes （LDs）. However, the difficulty in producing stable and reproducible high-quality p-type ZnO has hindered the development of ZnO p-n homojunction LEDs. An alternative strategy for achieving ZnO electroluminescence is to fabricate heterojunction devices by employing other available p-type materials （such as p-GaN） or building new device structures. In this article, we will briefly review the recent progress in ZnO LEDs/ LDs based on p-n heterostructures and metal-insulatorsemiconductor heterostructures. Some methods to improve device efficiency are also introduced in detail, including the introduction of Ag localized surface plasmons and single-crystalline nanowires into ZnO LEDs/LDs.
基金
supported by the National Basic Research Program of China(2012CB933703)
the National High Technology Research and Development Program of China(2006AA03Z311)
the National Natural Science Foundation of China(51172041,91233204 and 51372035)
the Program for New Century Excellent Talents in University(NCET-11-0615)
