摘要
As a promising group III-nitride semiconductor material,InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years.Following a literature survey of current status and progress of InAlNrelated studies,this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University,which focuses on innovation of the material growth approach and device structure for electronic applications.A novel pulsed metal organic chemical vapor deposition(PMOCVD)was first adopted to epitaxy of InAlN-related heterostructures,and excellent crystalline and electrical properties were obtained.Furthermore,the first domestic InAlN-based high-electron mobility transistor(HEMT)was fabricated.Relying on the PMOCVD in combination with special GaN channel growth approach,high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time.Additionally,other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications.Finally,some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications,showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.
As a promising group III-nitride semiconductor material, InAlN ternary alloy has been attracted increasing interest and widespread research efforts for optoelectronic and electronic applications in the last 5 years. Following a literature survey of current status and progress of InAlN- related studies, this paper provides a brief review of some recent developments in InAlN-related III-nitride research in Xidian University, which focuses on innovation of the material growth approach and device structure for electronic applications. A novel pulsed metal organic chemical vapor deposition （PMOCVD） was first adopted to epitaxy of InAlN-related heterostructures, and excellent crystalline and electrical properties were obtained. Furthermore, the first domestic InAlN-based high-electron mobility transistor （HEMT） was fabricated. Relying on the PMOCVD in combination with special GaN channel growth approach, high-quality InAlN/GaN double-channel HEMTs were successfully achieved for the first time. Additionally, other potentiality regarding to AlGaN channel was demonstrated through the successful realization of nearly lattice-matched InAlN/AlGaN heterostructures suitable for high-voltage switching applications. Finally, some advanced device structures and technologies including excellent work from several research groups around the world are summarized based on recent publications, showing the promising prospect of InAlN alloy to push group III-nitride electronic device performance even further.
基金
supported by the National Natural Science Foundation of China(60736033 and 60676048)
