铜植入层对硬质合金上金刚石薄膜附着力的影响

Effects of a copper implant layer on the adhesion of diamond films on WC-Co substrates

金刚石薄膜在含 Co的硬质合金刀具上的沉积有较大的困难 .在化学气相沉积条件下碳在钴中溶解和扩散限制了金刚石的形核并易生成石墨 ,导致了金刚石薄膜的附着力较差 .为增强金刚石薄膜在硬质合金刀具上的附着力 ,本研究采用了铜植入层作为扩散阻挡层 .实验研究表明铜植入层提高了脱钴后的刀具表面的硬度及金刚石薄膜的质量 ;压痕试验表明 :在载荷为 1 50 0 N时金刚石薄膜的开裂直径为 1 .1 2 mm,金刚石薄膜在刀具上的有很好的附着力 .

Deposition diamond films on WCCo substrates encounters difficulties s uch as the solution and diffusion of carbon in cobalt resulting in limited diamo nd nucleation, precipitation of graphite and poor adhesion. In this research a c opp er implant layer was adopted as a barrier layer for diffusion. The result of thi s study shows that the copper implant layer improves the hardness of the leached Co substrates and the quality of the diamond film. The cracker diameter was onl y 1.12 mm when an applied load was 1 500 N during indentation adhesion testing. The adhesion of diamond on WCCo substrate was greatly improved by the Cu i mplant layer.