摘要
用分子束外延系统 (MBE)生长了GaAs/AlGaAs不对称耦合双量子阱 (ACDQW ) ,采用组合注入质子的方法 ,在同一块衬底上获得了不同注入剂量的GaAs/AlGaAs不对称耦合双量子阱单元 ,没有经过快速热退火的过程 ,在常温下测量了不同注入剂量量子阱单元的显微光荧光谱和光调制反射光谱 ,发现了各区域子带间跃迁能量最大变化范围达到 81meV .由于样品未作高温热退火处理 ,为此由Al组分误差函数模型推导的扩散长度要大大高于扩散系数公式 .耦合量子阱的界面混合效应对于质子注入非常敏感 .
With combinatorial proton implantation, we obtained several areas with different implantation doses in single wafer of GaAs/AlGaAs asymmetry coupling double quantum well grown by MBE, and studied the optical characteristics with photoluminescence (PL) and photo-modulated reflectance(PR). Without rapid thermal annealing, maximum transition energy shift 81 meV was obtained in single wafer. The diffusion lengths of Al component calculated from error function were larger than that calculated from coefficient of diffusion formula. The interface effect of double quantum well is sensitive to proton implantation.
出处
《物理学报》
SCIE
EI
CAS
CSCD
北大核心
2001年第1期116-119,共4页
Acta Physica Sinica
基金
国家自然科学基金!(批准号 :6 96 76 0 14 )资助的课题&&
关键词
不对称耦合双量子阱
组合注入
显微光荧光谱
界面混合效应
半导体
砷化镓
asymmetry coupling double quantum well (ACDQW)
combinatorial implantation
photoluminescence
photo-modulated reflectance
intermixing
