用分步注入法改善SOI-SIMNI薄膜材料的电学性能

IMPROVEMENT IN ELECTRICAL PROPERTIES OF SIMNI FILMS BY MULTIPLE-STEPS IMPLANTATION

采用常规方法和分步注入法制备SOI SIMNI(SilicononInsulator SeparationbyImplantationofNitrogen)薄膜材料 .用液氦低温霍耳效应进行了分析测量 .测量结果表明 :分步注入法制备得到的样品具有低的薄层电阻R□ 和较高的载流子迁移率 .实验证明用分步注入法可以明显改善SIMNI薄膜材料的电学性能 .对实验结果和机理进行了解释 .

SOI\|SIMNI (Silicon On Insulator\|Separation by Implanted Nitrogen) films were formed by standard and multiple\|step implantation methods.The Hall\|effects measurements (4-300K) show that the multiple\|step implanted SIMNI films have a lower sheet resistance and higher carrier mobility than those in standard SIMNI films.The DLTS results indicated that there is a deep level defects E t=0 152 eV in the standard SIMNI films,and no deep level defects in the multiple\|step implanted SIMNI films,which have good electrical properties.