摘要
为研究不同掺杂元素对半导体桥电爆特性的影响规律,利用电容放电发火系统,对硼掺杂SCB和磷掺杂SCB的临界发火电压、发火时间以及发火所消耗的能量进行了测试,并做了对比分析。结果表明:在尺寸相同、掺杂浓度相同的条件下,磷掺杂半导体桥比硼掺杂半导体桥临界发火电压低;相同发火电压下,掺杂元素对发火时间的影响较小,并且磷掺杂半导体桥的发火能量比硼掺杂半导体桥的高,说明磷掺杂SCB性能优于硼掺杂SCB。
By use of capacitor discharge ignition system, the effect of different doping elements on electro-explosive characteristics of semiconductor bridge（SCB） was studied, based on the tested critical ignition voltage, ignition time and firing energy of SCB. It can be concluded that the critical ignition voltage of P-doped SCB was lower than that of B-doped SCB, on the same ignition voltage condition, doping elements had less effect on the ignition time, and the firing energy of P-doped SCB was higher than that of B-doped SCB. The study indicated that the performance of P-doped SCB is better than that of B-doped SCB.
出处
《火工品》
CAS
CSCD
北大核心
2014年第1期8-11,共4页
Initiators & Pyrotechnics
关键词
半导体桥
掺杂元素
发火时间
发火能量
Semiconductor bridge
Doping elements
Ignition time
Firing energy
