高功率密度IGBT模块的研发与特性分析

Development and Characterization of High Power Density IGBT Module

基于现有标准DMOS设计技术,通过优化高压IGBT&FRD芯片及其模块结构,降低芯片功耗、模块寄生电感和模块热阻,改善模块散热,提高最高工作温度。研究开发了高功率密度1 500 A/3 300 V、1 200 A/4 500 V及750 A/6 500 V IGBT模块,满足轨道交通的应用要求。

Based on the standard DMOS technologies, the IGBT＆FRD chip set and module structures were improved to realize lower loss, lower stray inductance, lower thermal resistance and higher junction temperature, as a result, the high power density 1 500 A/3 300 V, 1 200 A/4 500 V and 750 A/6 500 V 1GBT modules were developed, which could meet the requirements of rail transit vehicle application.