PLD法制备透明ZnO薄膜的主要点缺陷研究

Research on the Main Point Defects of Transparent ZnO Thin Film Prepared by PLD

采用脉冲激光沉积(PLD)法在石英衬底上制备了ZnO薄膜。为研究ZnO薄膜内部主要点缺陷,我们用(002)ZnO单晶与ZnO薄膜作对比,并进行了霍尔测试、X线衍射(XRD)和光学透射谱等基本表征。霍尔测量得到的高的霍尔迁移率及XRD图表明,制备的ZnO薄膜结晶良好,具有沿c轴高度择优取向。同时,ZnO薄膜衍射峰相对于单晶向大角度方向发生了漂移。透射谱表明,ZnO薄膜在可见光区透过率为75%,吸收带边相对于单晶发生蓝移。各种表征手段证明PLD法制备的ZnO薄膜主要点缺陷为Zn填隙(Zni)。

ZnO thin film was prepared by pulsed laser deposition （PLD） method on quartz substrate. For the study of the main point defects in the internal ZnO thin film, （002） ZnO single crystal was used for comparison with ZnO thin film, and these samples are characterized by Hall measurement, X-ray diffraction and the optical transmis- sion spectroscopy. The high Hall mobility obtained by Hall measurement and XRD pattern showed that ZnO film well crystallizedwith high degree of preferred orientation along the c-axis. Meanwhile, the diffraction peak of ZnO film drifted from large angle direction compared to that of single crystal. The transmission spectra showed that the average transmittance of ZnO film reached 75 %, and the absorption band edge produced blue shift compared to the single crystal. The main point defects of ZnO film prepared by PLD are Zn interstitial atoms （Zn1） proved by a vari- ety of characterization methods, which is a basis research for the application of ZnO thin films in the future.