摘要
用射频溅射法制备了金属 /半导体FeX(In2 O3) 1 -X颗粒膜 .用X射线衍射 (XRD) ,电子衍射 (ED) ,透过电子显微镜 (TEM )分析样品的微结构 ;用能散X射线谱 (EDAX)分析样品成份 .实验结果表明 :纳米尺度的Fe颗粒均匀地分散在非晶态In2 O3 中 .退火可使In2 O3 晶化 .其晶格常数与Fe的体积份数有关 ;退火可使Fe颗粒长大 ,晶格完整度有所提高 。
Metal/semiconductor Fe X(In 2O 3) 1-X granular films were prepared by the rf-sputtering.Microstructure was examined by Xray diffraction(XRD),electron diffraction(ED) and transmission electron microscopy(TEM).The components of the samples were determined by energy dispersive X-ray analysis(EDAX).The XRD and ED patterns show that the amorphous matrix In 2O 3 as-prepared crystallizes after thermal annealing.The XRD,ED and TEM patterns show that Fe particles are crystalline and disperse uniformly in In 2O 3.The grains grow up and the crystal lattice become more perfect after annealing.As a result,the magnetic behavior of the films transits from superparamagnetic to ferromagnetic.The variatioin of the lattice constant for In 2O 3 depends on the volume fraction of Fe particles.
出处
《昌潍师专学报》
2000年第5期1-5,共5页
Journal of Changwei Teachers College
