快速热处理中退火温度对Sol-gel法制备PZT铁电薄膜性能的影响

Effect of annealing temperature on the properties of PZT ferroelectric thin films in the process of RTP with Sol-gel method

利用Sol-Gel法在Pt/TiO2/SiO2/Si基底上用快速热处理(Rapid Thermal Processing,RTP)退火工艺制备出了致密的PZT铁电薄膜,主要研究了在退火时间为500s时退火温度对薄膜的结晶结构、表面形貌和铁电性能的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和铁电测试仪对制备的薄膜进行了性能表征。研究结果表明,当退火温度为6000C时,PZT薄膜具有(111)择优取向,表面致密无裂纹,且具有较好的铁电性能(其饱和极化值约为30 C/cm2,剩余极化约为20 C/cm2,矫顽场约为150KV/cm)。在100KV/cm电场下,电流密度J在10-1A/cm2数量级,表明所制的PZT纳米薄膜质量较好,能承受较高的场强以达到饱和极化状态而不被击穿。

Abstract： By Rapid thermal annealing process with the Sol - Gel method,the dense PZT ferroelectric thin films are prepared on Pt/TiO2/SiO2/ Si substrate ,and the influence of annealing temperature on the crystalline structure, surface morphology and fer- roelectric properties of thin films is studied when the annealing time is 500s. By X-ray diffraction （XRD）, scanning electron microscopy （SEM） and ferroelectric tester, thin films are characterized. The results show that, PZT films with （11 l） preferred orientation, dense surface without cracks have good ferroelectric properties （the saturated polarization value with 301aC/cm2, the remaining polarization value with 20μC/cm2, the Coercive field value with 150KV/cm） ,when the annealing temperature is 6000 C; In 100KV/cm electric field, current density J is in 10^-1μA/cm^2 magnitude, indicating that the PZT nano-films have better qual- ity, and can withstand high field strength to reach the saturation polarization state without breakdown.