摘要
氮化镓(Gallium(iii)Nitride,GaN)作为新一代半导体材料的代表,其高功率密度、高击穿场强的特点使其具备了带宽宽、效率高等优点。根据GaN功率管的特点,采用ADS仿真软件,对功率管进行了直流分析、稳定性分析以及输入输出匹配电路的仿真与设计,并对放大器效率指标进行了测试。实验数据表明,功率放大器在L频段可以达到连续波输出功率100 W,效率大于50%,验证了GaN功率管高效率的特性。
As one of the new kind of semiconductor material,the high power density and breakthrough field capacity of GaN fea-tures high bandwidth and efficiency. According to these features of GaN,the input and output matching circuits of power tube are simu-lated and designed by using ADS simulation software,and then the efficiency index of the amplifier is tested. The experiment results show that the output power of continuous wave can be up to 100 W and the efficiency can be better than 50% in L band,at the same time the high efficiency of the GaN power tube are validated.
出处
《无线电工程》
2014年第4期47-49,61,共4页
Radio Engineering
关键词
GaN功率管
直流分析
时序
ADS仿真
GaN power tube
direct current analysis
time sequence
ADS simulation
