CdSiP_2单晶生长及防爆工艺研究

Study on Growth and Explosion-proof Technologies of CdSiP_2 Single Crystal

对磷硅镉（CdSiPz）单晶生长过程中发生爆炸的原因进行了分析，设计出新型的逐层减压坩埚。通过在内外层坩埚之间的空腔内加入适量CdSiP2粉末产生的蒸气压，平衡和降低了晶体生长过程中坩埚内壁承受的压力，实现逐层减压，从而减小了内层坩埚形变，降低了生长容器爆炸的几率。同时，改进了布里奇曼生长法的降温工艺，生长出尺寸达＋14mm×32mm的CdSiP：单晶体。X射线分析表明单晶衍射面为（204）晶面，回摆峰半峰宽值为0．434，衍射谱峰强度高，具有良好的对称性；晶体在1500—7500cm。波数范围的红外透过率达55％，吸收系数为0．10～0．17cm-1。电阻率1．3×107Ω．cm。

The causes of explosion during the growth process of CdSiP2 single crystal were analyzed. A new type of layer-by-layer decompression crucible was designed. The vapor pressure generated from the added CdSiP2 powder between the inner and outer layer balanced and diminished the pressure applied to the inner layer, and therefore alleviated the deformation of the inner layer and decreased the possibility of explosion. Meanwhile, the cooling process of the Bridgman method was improved, and a CdSiP2 single crystal ingot with size of Φ14 mm× 32 mm was obtained. Results of X-ray Diffraction analysis show that cleavage face is （204） face, and the full width at half maximum of the XRD rocking curve is 0. 434 . The intensity of the diffraction peak is high and the shape of the peak has good symmetry. Infrared transmittance is about 55% in the region of 1500-7500 cm-1. Absorption coefficient is 0.10-0.17 cm-1 and the resistance is 1.3 × 10^7 Ω· cm.